general features v ds =30v,i d =18a r ds(on) < 7m ? @ v gs =10v r ds(on) < 10m ? @ v gs =4.5v high density cell design for ultra low rdson fully characterized avalanche voltage and current application power switching application hard switched and high frequency circuits uninterruptible power supply schematic diagram marking and pin assignment sop-8 top view package marking and ordering information device marking device device package reel size tape width quantity MSN0318W MSN0318W sop-8 ?330mm 12mm 2500 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v drain current-continuous i d 18 a drain current-continuous(t a =100 ) i d (100 ) 12.7 a pulsed drain current i dm 48 a maximum power dissipation p d 3 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 42 /w MSN0318W 30v(d-s) n-channel enhancement mode power mos fet lead free pin configuration more semiconductor company limited http://www.moresemi.com 1/6
electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 30 33 - v zero gate voltage drain current i dss v ds =30v,v gs =0v - - 1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.9 1.1 1.4 v v gs =10v, i d =12a - 5.5 7 drain-source on-state resistance r ds(on) v gs =4.5v, i d =10a - 6.5 10 m ? forward transconductance g fs v ds =5v,i d =12a 5 - - s dynamic characteristics (note4) input capacitance c lss - 2100 - pf output capacitance c oss - 460 - pf reverse transfer capacitance c rss v ds =15v,v gs =0v, f=1.0mhz - 230 - pf switching characteristics (note 4) turn-on delay time t d(on) - 20 - ns turn-on rise time t r - 15 - ns turn-off delay time t d(off) - 60 - ns turn-off fall time t f v dd =10v,i d =12a v gs =10v,r gen =2.7 ? - 10 - ns total gate charge q g - 41 - nc gate-source charge q gs - 14 - nc gate-drain charge q gd v ds =15v,i d =12a, v gs =10v - 11 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =18a - - 1.2 v diode forward current (note 2) i s - - 18 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production MSN0318W more semiconductor company limited http://www.moresemi.com 2/6
test circuit 1) e as test circuits 2) gate charge test circuit 3) switch time test circuit MSN0318W more semiconductor company limited http://www.moresemi.com 3/6
typical electrical and the rmal characteristics (curves) vds drain-source voltage (v) figure 1 output characteristics vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junction temperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance ( ? ) i d - drain current (a) i d - drain current (a) normalized on-resistance vgs gate-source voltage (v) i s - reverse drain current (a) MSN0318W more semiconductor company limited http://www.moresemi.com 4/6
vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature( ) figure 9 bv dss vs junction temperature t j -junction temperature( ) figure 10 v gs(th) vs junction temperature i d - drain current (a) c capacitance (pf) square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance r(t),normalized effective transient thermal impedance normalized bvdss vth (v) variance MSN0318W more semiconductor company limited http://www.moresemi.com 5/6
sop-8 package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 1.350 1.750 0.053 0.069 a1 0.100 0.250 0.004 0.010 a2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 d 4.700 5.100 0.185 0.200 e 3.800 4.000 0.150 0.157 e1 5.800 6.200 0.228 0.244 e 1.270(bsc) 0.050(bsc) l 0.400 1.270 0.016 0.050 0 8 0 8 MSN0318W more semiconductor company limited http://www.moresemi.com 6/6
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